| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing semiconductor light emitting element by which the characteristics and reliability of a semiconductor light emitting element are prevented from being affected even when ultramicro- leakage occurs from an organometallic gas supply pipeline. SOLUTION: When a desired semiconductor layer is caused to deposit on a wafer 2 set up in a chamber 1 by introducing a reactive gas containing an organometallic material into the chamber 2 and causing the gas to react with the wafer 2 in the chamber 2, a pipeline 3 which is used to introduce the reactive gas into the chamber 2 is constituted in a duplex pipe. At the time of causing the semiconductor layer to deposit on the wafer 2, the reactive gas is introduced into the chamber 2 by making the gas to flow through the internal pipe 31 while an inert gas, such as dry nitrogen, etc., is made to flow through the external pipe 32 on the outside of the internal pipe 31 so that the inert gas may be discharged to the outside. |
