| 摘要 |
PROBLEM TO BE SOLVED: To provide a switch circuit of a MOSFET base capable of propagating a signal of a relatively high frequency with minimum attenuation. SOLUTION: This high-frequency switch circuit (10) includes a first impedance element coupled to the gate of a transfer transistor (M1) and a second impedance element coupled to the bulk of the transfer transistor. One or both of the impedance elements substantially cancel low-parasitic shunt capacitance associated with the transfer transistor that controls signal attenuation at high frequencies. The impedance element is coupled in series with parasitic capacitance to increase the impedance of that pathway, thereby increasing a pass-band width. The switch circuit has an array of applications, including computing system, routers, and flat panel screen displays. |
