发明名称 METHOD OF FORMING METAL GATE
摘要 PROBLEM TO BE SOLVED: To provide a method of forming a metal gate capable of preventing a whisker of a metal oxide film from being formed in a process of forming a metal gate. SOLUTION: In the method of forming a metal gate electrode after a selective oxidation process, heat treatment is performed in a gas atmosphere containing hydrogen atoms. The heat treatment process removes a metal oxide produced by the selective oxidation process by a reducing a reaction or prevents the formation of whisker nuclei by making the metal oxide contain hydrogen atoms to suppress surface mobility.
申请公布号 JP2002314076(A) 申请公布日期 2002.10.25
申请号 JP20020028635 申请日期 2002.02.05
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 CHO MAHN-HO;GU JIKIN;CHOI CHUL-JOON;CHO JUN-KYU;HEO SEONG-JUN
分类号 H01L21/28;H01L29/423;H01L29/43;H01L29/49;H01L29/78;(IPC1-7):H01L29/78 主分类号 H01L21/28
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