发明名称 |
METHOD OF FORMING METAL GATE |
摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming a metal gate capable of preventing a whisker of a metal oxide film from being formed in a process of forming a metal gate. SOLUTION: In the method of forming a metal gate electrode after a selective oxidation process, heat treatment is performed in a gas atmosphere containing hydrogen atoms. The heat treatment process removes a metal oxide produced by the selective oxidation process by a reducing a reaction or prevents the formation of whisker nuclei by making the metal oxide contain hydrogen atoms to suppress surface mobility.
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申请公布号 |
JP2002314076(A) |
申请公布日期 |
2002.10.25 |
申请号 |
JP20020028635 |
申请日期 |
2002.02.05 |
申请人 |
SAMSUNG ELECTRONICS CO LTD |
发明人 |
CHO MAHN-HO;GU JIKIN;CHOI CHUL-JOON;CHO JUN-KYU;HEO SEONG-JUN |
分类号 |
H01L21/28;H01L29/423;H01L29/43;H01L29/49;H01L29/78;(IPC1-7):H01L29/78 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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