| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for repairing a dielectric layer by which the surface of the dielectric layer is flattened, metallic layers are surely insulated with each other, and no short-circuiting occurs, by filling voids produced on the surface of the dielectric layer in a semiconductor substrate to repair them. SOLUTION: This method includes a step for polishing the surface of a first dielectric layer 13 in a semiconductor substrate 10 provided with at least the first dielectric layer 13 and a first dielectric layer 15, a step for forming a second dielectric layer 21 on the first dielectric layer 15 for cover at least one void produced in the first dielectric layer 15 in the said step, a step for forming an SOG layer 23 on the second dielectric layer 21, a step for flattening the SOG layer 23 by etching back, and a step for forming a third dielectric layer 24 on the SOG layer.
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