METHOD OF FORMING FINE PATTERN, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To etch substrates having different open area ratios while suppressing fluctuations in processing shape to form a fine pattern. SOLUTION: The method for forming a fine pattern includes steps of forming an interlayer insulating film in a substrate and forming a plurality of holes in the interlayer insulating film by etching. The open area ratio of the fine pattern is adjusted by involving a dummy hole in the holes.