| 摘要 |
PROBLEM TO BE SOLVED: To provide a giant magnetoresistance effect element, capable of obtaining a high output and dealing with a high resistance and high recording density, and to provide a magnetoresistance effect type head having this giant magnetoresistance effect element, a thin film magnetic memory, and a thin film magnetic sensor. SOLUTION: The huge magnetoresistance effect element 1 is constituted by forming a laminated film 2 having a ferromagnetic film, a non-magnetic film and an antiferromagnetic film in such a manner that the ferromagnetic film has a magnetization free layer 13 and a magnetization fixed layer, a current flows to a direction perpendicular to the film surface of the film 2 by an upper electrode and a lower electrode, the film 2 is laminated by including a high resistance layer 21, and forming a hard magnetic film 3 made of a conductive hard magnetic material at both outsides of the film 2 in a width direction and an insulating layer 4 by a direct connection in such a manner that the film 3 is connected to the layer 13 side from the layer 21. The magnetoresistance effect type head, the thin film magnetic memory and the thin film magnetic sensor are each constituted by providing the giant magnetoresistance effect element 1. |
