| 摘要 |
PROBLEM TO BE SOLVED: To reduce leak current at bias cut in a power supply standby circuit using a low threshold MOS transistor. SOLUTION: In a MOS semiconductor integrated circuit in which threshold voltages of MOSFETs 1 and 2 are set low in order to realize the operation of a low power supply voltage VDD, an nMOSEFT 1 is provided in the path of the drain current Id of the pMOSFET 2, voltage between the gate and the source of the pMOSFET 2 is prevented from becoming zero even when the bias is cut by controlling bias application to a circuit 4 by switching the path to conduction/non-conduction, and the occurrence of a leak current can be suppressed in the pMOSFET 2.
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