| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor product having arsenic N+ diffusion that prevents the deterioration of protectiveness caused by a rise (walkout) in trigger voltage which occurs when an ESD pulse is applied to the product several times in the case where the product has a phosphorus-diffused ESD protective off-transistor. SOLUTION: The semiconductor product is constituted in such a structure that the drain diffusion of the phosphorus-diffused ESD protective off-transistor is not provided adjacently to an off-gate and the arsenic N+ diffusion 5 is provided in the adjacent area of an element separating region 8.
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