| 摘要 |
PROBLEM TO BE SOLVED: To form a gate bird's beak without increasing wiring resistance of a gate wire and embed an inter-layer insulation film between gate wirings readily. SOLUTION: A gate oxide film 2 is formed on a substrate 1, and a gate wire comprising a first silicon film 3, a silicide film 4 and an insulation film 5 is formed on the gate oxide film 2. Then, impurities are implanted by using the gate wire as a mask and a first diffusion layer 6 is formed. A second silicon film is formed all over the substrate 1 to cover the gate wire. The second silicon film is subjected to thermal oxidation and a thermal oxide film 8 is formed. A layer insulation film 9 is formed on the thermal oxide film 8. |
