| 摘要 |
PROBLEM TO BE SOLVED: To provide a DRAM which is reduced in malfunction caused by noise by reducing the parasitic capacitance between groove-type stack cell capacitors in a memory cell area. SOLUTION: A groove type stack cell has a number of identical capacitors which are formed by burying storage nodes 8, capacitor insulating films 9, and plate electrodes 10 in a plurality of grooves provided on an interlayer insulating film 11. The cell is arranged so that the capacitors are faced only to one-side faces of the grooves. |
