| 摘要 |
PROBLEM TO BE SOLVED: To obtain a highly integrated semiconductor device which can obtain good deposited-film coverage in a storage node hole or contact hole 26 having a high aspect ratio and has a small chip size. SOLUTION: This semiconductor device is equipped with a lower interlayer insulating film 14 provided on the upper surface of a semiconductor substrate 30 on which an element function is provided, an upper interlayer insulating film 20 having a higher etching rate than the insulating film 14 has in the direction parallel to the surface of the film 14, and storage node electrodes 8 covering the internal walls of storage node holes formed through the insulating films 14 and 20. This device is also provided with dielectric films 9b covering the electrodes 8 and upper surface of the upper interlayer insulating film 20 and cell plate electrodes 9a covering the dielectric films 9b. The storage node holes 25 are formed so that their diameters of the upper interlayer insulating film 20 become larger than those of the lower interlayer insulating film 14. |
