发明名称 CAPACITOR DEVICE AND METHOD OF FORMING CAPACITOR
摘要 PROBLEM TO BE SOLVED: To provide a more reliable damascene capacitor structure by preventing the occurrence of leakage and dielectric breakdown between capacitor plates. SOLUTION: A capacitor device is provided with a trench which is formed into an inter-level dielectric insulator layer and has sidewalls, a first thin lower conductor plate 32 formed on the bottom of the trench, and a second upper conductor plate 44 having a surface which is commonly formed as the surface of the dielectric insulator layer also. The capacitor device is also provided with a dielectric layer 42 formed between the conductor plates 32 and 44. The dielectric layer 42 prevents one of the conductor plates 32 and 44 from extending to the sidewalls of the trench and at least one upper corner of the conductor plate from extending toward the upper part of the trench.
申请公布号 JP2002313939(A) 申请公布日期 2002.10.25
申请号 JP20020060480 申请日期 2002.03.06
申请人 INTERNATL BUSINESS MACH CORP <IBM> 发明人 STAMPER ANTHONY K
分类号 H01L27/04;H01L21/02;H01L21/334;H01L21/768;H01L21/822;H01L27/08;(IPC1-7):H01L21/822 主分类号 H01L27/04
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