METHOD FOR MANUFACTURING MOS TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To provide a low capacity low leakage MOS transistor and its manufacturing method. SOLUTION: A hole 21 is made at a trench isolating part 18 to expose the sidewall of a substrate 12 in a working region 13. The sidewall in the hole is doped with impurities to form a lightly doped region 20. A conductive material 22 is then formed in the hole as source and drain regions 24. Subsequently, an etching stop layer 16 is removed to expose the sidewall of the conductive material 22 which is then oxidized to form and oxide 26. Furthermore, a spacer 28 is formed on the sidewall at the oxidized part of the conductive material 22. Thereafter, oxide pads 14 are removed from the substrate 12 except the lower part of the spacer 28 and a gate dielectric layer 30 is formed. Finally, a gate electrode 32 is formed on the gate dielectric layer.