| 摘要 |
PROBLEM TO BE SOLVED: To provide a MOS semiconductor device in which a MOS transistor is required to be improved in withstand voltage, integrating density, performance, etc., by refining ICs, and to provide a method of manufacturing the device. SOLUTION: In this MOS semiconductor device, contacting regions 60, 61, 62, and 63 are formed to the minimum on the surfaces of drain regions 51 and 54 and source regions 52 and 55 in accordance with the widths of contact holes 67 and 69. In addition, the drain regions 51 and 54 and source regions 52 and 55 are formed to deep portions of an epitaxial layer 48. Since the semiconductor device has an area where a depletion layer can be formed surely when the MOS transistor is turned off, namely, when a reverse voltage is impressed upon the transistor, the withstand voltage, integrating degree, performance, etc., of the transistor are improved.
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