| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having an insulation gate drive-type device having a trench structure in which a gate width is enlarged on the same chip area to reduce ON resistance to thereby increase a current, and to provide its manufacturing method. SOLUTION: In an n-type semiconductor layer 1, formed is a depressed trench 11, and on the inside surface of the depressed trench 11, formed are a gate oxide film 4 and a gate electrode 5. Then, a p-type channel diffusion region 2 and an n-type source region 3 are formed sequentially on the surface of the semiconductor layer 1 surrounding the gate electrode 5 by diffusion or the like. An insulating film 6 is sufficiently thickly formed on the surface of the source electrode 5 by the oxidation of the gate electrode 5. A metal film to be a source electrode is formed directly on the surfaces of the insulating film 6 and the source region 3, the metal of the metal film spikes into the source region 3 and the channel diffusion region 2 to form an alloy layer 7a to bring both the layers into ohmic contact.
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