| 发明名称 |
SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD |
| 摘要 |
PROBLEM TO BE SOLVED: To develop a bipolar transistor for power amplifier in a short time and at a low cost. SOLUTION: A plurality of basic bipolar transistors are manufactured on the same substrate in advance, and only desired ones are selected from them and they are allowed to be operated.
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| 申请公布号 |
JP2002313797(A) |
申请公布日期 |
2002.10.25 |
| 申请号 |
JP20010117608 |
申请日期 |
2001.04.17 |
| 申请人 |
HITACHI LTD |
发明人 |
OBE ISAO;MOCHIZUKI KAZUHIRO;OKA TORU |
| 分类号 |
H01L21/331;H01L21/8222;H01L27/082;H01L29/737;(IPC1-7):H01L21/331;H01L21/822 |
主分类号 |
H01L21/331 |
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