发明名称 CHARGED PARTICLE BEAM EXPOSURE SYSTEM AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a charged particle beam exposure system more improved in exposure and transfer accuracy by reducing its axial aberration. SOLUTION: When the rotating amount of an image which reduces the axial aberration is set and the relative angular relation between a reticle (mask) stage and a wafer stage is set in accordance with the rotating amount, exposure and transfer can be performed with a small axial aberration and the exposure and transfer accuracy can be raised. In addition, when the overall exposure and transfer accuracy is maintained at the same degree like in the conventional example, exposure and transfer errors can be assigned to other aberrations or out-of-focus and, consequently, the design of this charged particle beam exposure system becomes easier.
申请公布号 JP2002313705(A) 申请公布日期 2002.10.25
申请号 JP20010117974 申请日期 2001.04.17
申请人 NIKON CORP 发明人 KAMIJO KOICHI
分类号 G03F7/20;H01J37/153;H01J37/305;H01L21/027;(IPC1-7):H01L21/027 主分类号 G03F7/20
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