发明名称 PLASMA TREATMENT APPARATUS
摘要 PROBLEM TO BE SOLVED: To achieve a plasma treatment apparatus that can be applied to various processes, and requires less installation area. SOLUTION: In the plasma treatment apparatus, a substrate transfer mechanism 4 for transferring a substrate between chambers is provided in a main vacuum chamber 3 where a vacuum chamber 2 for plasma treatment or the like is interlocked in a radial or fan shape from the side. In this case, the substrate transfer mechanism 4 sets the substrate to a vertical position for transferring. A cylindrical pad 6 is rotatably established, and a plate-shaped notching 6a that allows the substrate to be accommodated or to pass is formed in the cylindrical pad 6. Additionally, a hollow section 6c is formed.
申请公布号 JP2002313875(A) 申请公布日期 2002.10.25
申请号 JP20010119717 申请日期 2001.04.18
申请人 FOI:KK 发明人 TASHIRO MASAHITO;OKUMURA YUTAKA
分类号 H05H1/46;B65G49/06;B65G49/07;H01L21/205;H01L21/302;H01L21/3065;H01L21/677;H01L21/68;(IPC1-7):H01L21/68;H01L21/306 主分类号 H05H1/46
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