Verfahren zur Bildung einer Ätzstoppschicht während der Herstellung eines Halbleiterbauteils,申请号DE20001056866-传众专利搜索

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发明名称	Verfahren zur Bildung einer Ätzstoppschicht während der Herstellung eines Halbleiterbauteils
摘要
申请公布号	DE10056866(C2)	申请公布日期	2002.10.24
申请号	DE20001056866	申请日期	2000.11.16
申请人	ADVANCED MICRO DEVICES, INC.	发明人	WIECZOREK, KARSTEN;HAUSE, FREDERICK N.;HORSTMANN, MANFRED
分类号	H01L21/285;H01L21/336;H01L21/768;(IPC1-7):H01L21/283	主分类号	H01L21/285
代理机构		代理人
主权项
地址

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