Semiconductor power component e.g. vertical insulated gate bipolar transistor, has n-type and p-type drift regions with specific degree of compensation, that are connected to rear side emitter region

摘要

A drift region formed in the rear side of an emitter (306) and partially extending to the transistor's front side surface, has n-type drift regions (304,340) and a p-type drift region (314). A degree of compensation determined from the n-type and p-type drift regions (340,314) is greater than one and is maximum at the side of p-type drift region that faces away from the transistor's front surface. An Independent claim is included for semiconductor power component manufacturing method.