GALLIUM NITRIDE COMPOUND SEMICONDUCTOR ELEMENT

摘要

A gallium nitride compound semiconductor element long in service life and excellent in temperature characteristics, wherein a first cap layer (108a) containing low-concentration n-type impurities and p-type impurities (preferably non-dope grown), and a second cap layer including Al and doped with p-type impurities are laminated on an active layer (107) consisting of an n-type gallium nitride compound semiconductor including In and doped with n-type impurities to thereby restrict compensation by a donor and an acceptor near the interface between the active layer and the cap layer.