| 摘要 |
A multispectral detector is grown epitaxially on a substrate such as InP, GaAs, or Si and comprises sets of multi-quantum well layers. In the method of the subject invention, contact layers are grown on the substrate and on top of the active layers. The active layers comprise one or more sets of multiquantum well layers grown adjacent to each other. The active layers and multiquantum wells consist of well and barrier layers prepared from various stochiometric ratios of InGaAlAs and InGaAsP, with the barrier layers of InAlAs and InP, or well layers GaInP interspersed with barrier layers of GaxI1-xAsyP1-y(0</= x</=1, 0</=y</=1).
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