| 摘要 |
A magnetic memory device, such as a magnetic random access memory (MRAM), and a method for forming same are described herein. The magnetic memory device includes a bit (24), such as a tunneling magneto-resistance (TMR) structure or a giant magneto-resistance (GMR) structure, which is sensitive to magnetic fields and stores data. The bit (24) is preferably disposed between a top electrode (74) with a magnetic keeper (52, 54) and a lower conducting line (12). The top electrode (74) is formed by a damascene process and is preferably formed from copper. The magnetic keeper (52, 54) of the top electrode (74) includes a magnetic material layer (54) (e.g., Co-Fe) and can also include a barrier layer (52) (e.g., Ta). In addition, the magnetic keeper stack (52, 54) can be in contact with one, two, or three surfaces of the top electrode (74) that face away from the bit (24). |
