| 摘要 |
<p>An infrared sensor comprising a support member including a support film and a substrate having a hollow portion and supporting the support film; a polysilicon film extending from over the hollow portion to over the substrate; SiO2 formed over the polysilicon film and including a first contact hole over the hollow portion and a second contact hole over the substrate; an aluminum film connected with the polysilicon film through the first contact hole and with an adjoining polysilicon film through the second contact hole; and a heat absorbing layer formed over the hollow portion to cover the first contact hole. The aluminum film is formed over the hollow portion through the corresponding polysilicon film and the SiO¿2?</p> |
