发明名称 |
Method for avoiding defects produced in the CMP process |
摘要 |
A method for avoiding defects produced in The CMP process has the following steps: sequentially depositing a first dielectric layer and a second dielectric layer on a semiconductor substrate, wherein the wet-etching rate of the first dielectric layer is greater than the wet-etching rate of the second dielectric layer; forming a plurality of first holes on a plurality of the predetermined contact window areas respectively; wet etching the first dielectric layer in each of the first holes to form a plurality of second holes on the plurality of the predetermined contact window areas respectively; forming a conductive layer to fill each of the second holes; and performing the CMP process to level off the conductive layer and the second dielectric layer.
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申请公布号 |
US2002155716(A1) |
申请公布日期 |
2002.10.24 |
申请号 |
US20010836219 |
申请日期 |
2001.04.18 |
申请人 |
YANG MING-CHENG;WANG JIUN-FANG |
发明人 |
YANG MING-CHENG;WANG JIUN-FANG |
分类号 |
H01L21/302;H01L21/321;H01L21/461;H01L21/768;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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