SOI WAFER AND ITS MANUFACTURING METHOD

摘要

An SOI wafer manufactured by an ion implantation separation method wherein the width of an SOI island area of a terrace area which is formed at an SOI wafer edge and in which a base wafer surface is exposed is less than 1 mm and the density of pit-like defects detected by an LPD inspection, present on the surface of an SOI layer, and having a size of 0.19 mu m or more is less than 1 count/cm<2>. No SOI islands are produced in separation and the density of LPD defects present on the surface of the SOI wafer is lowered. Its manufacturing method is also disclosed. Defective devices are reduced.