| 摘要 |
In case capacitor-type ferroelectric memory is formed by using SrB2Ta2O9 having superior fatigue resistance for ferroelectric layer, non-orientation layer is inferior in angularity, and SBT of orientation layer is subject to be oriented to c-axis orientation, polarization moment of a-axis direction was not effectively used, on Si single crystal substrate , a buffer layer and a bottom electrode layer composed of conductive oxide having perovskite structure are grown in epitaxially, furthermore the epitaxial growth of ferroelectric layer composed of SBT is performed with slanting c-axis to the substrate by 45 to 55 degrees.
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