LONG WAVELENGTH VERTICAL CAVITY SURFACE EMITTING LASER

摘要

Selectively oxidized vertical cavity lasers (900) emitting at about 1290 nm using InGaAsN quantum wells that operate continuous wave. The lasers (900) employ a semi-insulating GaAs substrate (910) for reduced capacitance, high quality, low resistivity AlGaAs DBR mirror structures (920, 970), and a strained active region (18) based on InGaAsN. In addition, the design of the VCSEL (900) reduces free carrier absorption of 1300 nm light in p-type materials (950) of the lasers by placing relatively high p-type dopant concentrations (952(a), 952(b)) near standing wave nulls (980).