| 摘要 |
The invention relates to a method for operating an MRAM semiconductor memory arrangement, whereby, in order to read stored information, reversible magnetic changes are carried out on the TMR cells (TMR1, TMR2, ...) and a corresponding transient changed current compared with the original read signal. The TMR memory cell itself can thus serve as reference, although the information in the TMR memory cell is not destroyed, in other words the same must not be back-written. The invention is used to advantage in an MRAM memory arrangement, in which several TMR cells (TMR1, ..., TMR4) are connected in parallel to a selection transistor (TR1) and in which a write line (WL1, WL2), not electrically connected to the memory cell, is provided. |
