| 摘要 |
The invention relates to a power semiconductor component, e.g. an emitter switched thyristor comprising an anode contact at the rear (502), an emitter region (505) of a first conductivity type (p<+>) (504, 514, 540) and a drift region, which extends partially to the front surface; a front MOS control structure (503, 506, 560, 508, 580, 509); and a front cathode contact (501). The drift region (504, 514, 540) has a first drift zone (540) of the second conductivity type (n<->), a second drift zone (504) of the second conductivity type (n) and a third drift zone (514) of the first conductivity type (p). The first drift zone (540) is a buried zone. The second drift zone (504) connects the front surface with the first drift zone (540). The third drift zone (514) connects the first and/or the second body region (508, 580) with the first drift zone (540).
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