| 摘要 |
A ferroelectric memory element and an electronic apparatus provided with this ferroelectric memory element are provided with a thin film recording layer of less than 50 nm film thickness having a high polarization moment and a high Curie temperature, wherein a recording layer of BaTiO3 is fabricated so as to be oriented in a pseudo-cubic system <111> direction in a trigonal crystal structure, and in order to increase the polarization moment and Curie temperature, the unit cell in BaTiO3 film is elongated more than 2% in the pseudo-cubic system <111> direction compared with the unit cell in a bulk material of BaTiO3, wherein in order to produce lattice strain in the crystal structure of the recording layer 3, the recording layer is grown epitaxially on the electrode layer 2 that serves as the base layer, the ferroelectric memory element being provided with the recording layer, and the electronic apparatus being provided with the ferroelectric memory element.
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