发明名称 Probe structure for testing semiconductor devices and method for fabricating the same
摘要 Disclosed are a probe structure for testing semiconductor devices and a method for fabricating the probe structure. The fabricated probe structure of the present invention satisfies the high density, the uniformity of size, height and spacing, and the integration of elements. The probe structure of the present invention solves the conventional problems such as long fabrication time of the probe structure, difficulty in finely controlling the structure of the probe structure, complexity of the whole process, mechanical instability of the products, and difficulty in uniformly assembling a plurality of the probe structures. Additionally, the probe structure of the present invention solves several problems caused in an actual testing step of the semiconductor devices, for instance, long testing time of the semiconductor device, difficulty in providing the sufficient contact force between the probe structure and the semiconductor device, and having to specially design the test pads of the semiconductor device.
申请公布号 US2002153911(A1) 申请公布日期 2002.10.24
申请号 US20020125248 申请日期 2002.04.18
申请人 IC MEMS, INC. 发明人 CHO DONG-IL;PARK SANGJUN
分类号 G01R1/073;G01R3/00;(IPC1-7):G01R31/02 主分类号 G01R1/073
代理机构 代理人
主权项
地址