发明名称 |
Vibratory beam electromechanical resonator |
摘要 |
A resonator formed by the steps of defining an active single-crystal silicon layer delimited by a buried insulator layer, depositing a silicon-germanium layer by a selective epitaxy method so that the silicon-germanium layer grows above the active single-crystal silicon area, depositing by a non-selective epitaxy method a silicon layer and etching it according to a desired contour, and removing the silicon-germanium by a selective etching with respect to the silicon and to the insulator.
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申请公布号 |
US2002153808(A1) |
申请公布日期 |
2002.10.24 |
申请号 |
US20020113789 |
申请日期 |
2002.04.01 |
申请人 |
SKOTNICKI THOMAS;DUTARTRE DIDIER;RIBOT PASCAL |
发明人 |
SKOTNICKI THOMAS;DUTARTRE DIDIER;RIBOT PASCAL |
分类号 |
H03H3/00;H03H9/24;(IPC1-7):H01L41/08 |
主分类号 |
H03H3/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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