| 摘要 |
<p>A ceramic bonded body and its manufacturing method and a ceramic structure for a semiconductor wafer are disclosed. The ceramic bonded body is used especially for a semiconductor manufacturing system and a semiconductor inspecting instrument such as a hot plate (ceramic heater), an electrostatic chuck, or a wafer prober and is produced by bonding the same or different kinds of ceramic bodies. The ceramic bonded body is characterized in that ceramic grown particles so grown as to invade ceramic bodies on both sides of the bond interface of the ceramic bodies are present at the interface and in that no concentration layer of sintering assistant is formed at the bond interface.</p> |
