发明名称 Method of making semiconductor device
摘要 A method of making a semiconductor device, comprises preparing a plurality of lots each including semiconductor substrates to be processed, the plurality of lots including at least first and second lots, processing the plurality of lots for every one lot, using a semiconductor manufacturing apparatus, judging whether or not the semiconductor manufacturing apparatus is subjected to cleaning before the second lot is processed, depending upon both a first processing type of the first lot to be processed and a second processing type of the second lot to be processed after the first lot, and processing the second lot without the cleaning in the case where the second lot does not require the cleaning.
申请公布号 US2002155727(A1) 申请公布日期 2002.10.24
申请号 US20020107434 申请日期 2002.03.28
申请人 NARITA MASAKI;OKUMURA KATSUYA;OHIWA TOKUHISA 发明人 NARITA MASAKI;OKUMURA KATSUYA;OHIWA TOKUHISA
分类号 H01L21/302;H01L21/00;H01L21/205;H01L21/304;H01L21/3065;H01L21/66;(IPC1-7):H01L21/31;H01L21/469 主分类号 H01L21/302
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