发明名称 |
Method for determining and removing phase conflicts on alternating phase masks |
摘要 |
A photoresist layer on a substrate wafer is exposed in first sections with a first exposure radiation and in second sections with a second exposure radiation that is phase-shifted by 180°. The first and second sections adjoin one another in boundary regions in which the photoresist layer is artificially not sufficiently exposed. Where a distance between these boundary regions is smaller than a photolithographically critical, least distance, the photoresist layer is exposed, at a first boundary region, with a third exposure radiation and at a second boundary region with a fourth exposure radiation phase-shifted by 180°. A trim mask provided for the process has a first translucent region and a second translucent region. The first light-transparent region and the second light-transparent region are fashioned such that the light passing through the first light-transparent region and the light passing through the second light-transparent region has a phase displacement of 180°.
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申请公布号 |
US2002155362(A1) |
申请公布日期 |
2002.10.24 |
申请号 |
US20020126371 |
申请日期 |
2002.04.19 |
申请人 |
HEISSMEIER MICHAEL;HOFSASS MARKUS;LUDWIG BURKHARD;MOUKARA MOLELA;NOLSCHER CHRISTOPH |
发明人 |
HEISSMEIER MICHAEL;HOFSASS MARKUS;LUDWIG BURKHARD;MOUKARA MOLELA;NOLSCHER CHRISTOPH |
分类号 |
G03F1/00;(IPC1-7):G03F9/00;G03C5/00 |
主分类号 |
G03F1/00 |
代理机构 |
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