发明名称 |
Method for reducing plasma damage to a gate oxide of a metal-oxide semiconductor wafer |
摘要 |
The present invention provides a method for reducing plasma damage to a gate oxide of a metal-oxide semiconductor (MOS) transistor positioned on a substrate of a MOS semiconductor wafer. The method begins with the formation of a dielectric layer covering the MOS transistor on the substrate. An etching process is then performed to form a first contact hole through the dielectric layer to a gate on the surface of the MOS transistor, as well as to form a second contact hole through the dielectric layer to an n-well in the substrate. A bypass circuit, positioned on the dielectric layer and the first and second contact holes, and a fusion area are then formed. The fusion area, electrically connecting with the bypass circuit, also electrically connects with the MOS transistor and the n-well thereafter. Ions produced during the process are thus transferred to the n-well via the conductive wire so as to reduce plasma damage to the gate oxide. The fusion area is finally disconnected after the formation of the MOS transistor.
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申请公布号 |
US2002155680(A1) |
申请公布日期 |
2002.10.24 |
申请号 |
US20020063388 |
申请日期 |
2002.04.17 |
申请人 |
CHEN YI-FAN;PU CHI-KING;FAN SHOU-KONG |
发明人 |
CHEN YI-FAN;PU CHI-KING;FAN SHOU-KONG |
分类号 |
H01L21/28;H01L21/336;H01L21/74;H01L23/60;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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