发明名称 |
Thin-film transistor and method of manufacturing the same |
摘要 |
To a polycrystalline silicon layer crystallized by irradiation with laser light, a mixed gas comprised of ozone gas and H2O or N2O gas is fed at a processing temperature of 500° C. or below, or the polycrystalline silicon layer is previously treated with a solution such as ozone water or an aqueous NH3/hydrogen peroxide solution, followed by oxidation treatment with ozone, to form a silicon oxide layer of 4 nm or more thick at the surface of the polycrystalline silicon layer for forming a thin-film transistor having less variations of characteristics on an unannealed glass substrate.
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申请公布号 |
US2002153567(A1) |
申请公布日期 |
2002.10.24 |
申请号 |
US20020166311 |
申请日期 |
2002.06.11 |
申请人 |
HORIKOSHI KAZUHIKO;OGATA KIYOSHI;NAKAHARA MIWAKO;TAMURA TAKUO;NAKANO YASUSHI;ORITSUKI RYOJI;ITOGA TOSHIHIKO;KAMO TAKAHIRO |
发明人 |
HORIKOSHI KAZUHIKO;OGATA KIYOSHI;NAKAHARA MIWAKO;TAMURA TAKUO;NAKANO YASUSHI;ORITSUKI RYOJI;ITOGA TOSHIHIKO;KAMO TAKAHIRO |
分类号 |
H01L29/786;H01L21/00;H01L21/336;H01L27/01;H01L29/04;H01L29/49;H01L31/036;H01L31/0392;(IPC1-7):H01L27/01;H01L31/039 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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