Method for fabricating semiconductor device,申请号US20010956122-传众专利搜索

发明名称	Method for fabricating semiconductor device
摘要	Disclosed herein is a method of fabricating a semiconductor device, comprising the steps of preparing a semiconductor wafer with a plurality of semiconductor elements formed thereon, selectively providing an insulating adhesive over respective predetermined areas of said semiconductor elements, and fractionizing the semiconductor elements.
申请公布号	US2002155638(A1)	申请公布日期	2002.10.24
申请号	US20010956122	申请日期	2001.09.20
申请人	UCHIDA YASUFUMI	发明人	UCHIDA YASUFUMI
分类号	H01L23/12;H01L21/301;H01L21/56;H01L21/58;H01L21/60;H01L21/68;H01L21/78;H01L21/98;H01L25/065;H01L25/07;H01L25/18;(IPC1-7):H01L21/44	主分类号	H01L23/12
代理机构		代理人
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