| 发明名称 |
METHOD FOR FORMING AN SOI SUBSTRATE BY USE OF PLASMA ION IRRADIATION |
| 摘要 |
A method for forming a silicon on insulator substrate includes the step of dissociating a plasma of molecules including at least any one of oxygen and nitrogen to obtain ions. The ions are accelerated by passage through gaps between acceleration electrodes at a predetermined acceleration energy for irradiation of the accelerated ions onto a silicon substrate which is heated to form an insulation film within the silicon substrate.
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| 申请公布号 |
US2002155679(A1) |
申请公布日期 |
2002.10.24 |
| 申请号 |
US20000501532 |
申请日期 |
2000.02.09 |
| 申请人 |
OGURA ATSUSHI;NUMASAWA YOUICHIROU;DOI AKIRA;TANJYO MASAYASU |
发明人 |
OGURA ATSUSHI;NUMASAWA YOUICHIROU;DOI AKIRA;TANJYO MASAYASU |
| 分类号 |
H01L21/76;H01L21/02;H01L21/20;H01L21/265;H01L21/762;H01L21/84;H01L27/12;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/76 |
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