| 摘要 |
A method of reducing leakage current in a metal-oxide semiconductor (MOS) transistor is employed on a semiconductor wafer, having a substrate, the MOS transistor and a shallow trench isolation (STI) structure adjacent to the MOS transistor on a wafer surface. The method is employed to form a gettering region within the STI structure to getter metal ions diffusing from a silicide layer so as to reduce leakage current in the MOS transistor.
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