| 摘要 |
<p>An A1 bond pad (1) of a semiconductor metallisation is coated with Ni (4) in a simple process. The substrate is etched to remove oxide, and is subsequently rinsed in a non-aqueous liquid. With the non-aqueous liquid (acetone) still on the surface the substrate is placed in an electroless bath having a salt complex containing metal ions as cations and a reducing agent as anions. The bath temperature is higher than boiling point of the non-aqueous rinse solution so that there is immediate evaporation.</p> |
