Semiconductor power component e.g. emitter switched thyristor as ignition transistor of ignition coil of combustion engine, has drift zone joined to rear face emitter zone

摘要

A semiconductor power component has a rear-face anode contact (502) and a rear face emitter zone (505).A drift zone (504,514,540) is joined to the rear face emitter zone and a front face MOS control structure (503,506,508, 560,580) has a source zone 5060 of the second conductivity type (n+) and a first body zone (5080 of the first conductivity type (p). A front face cathode contact (501) is connected to thee source zone (506) and the first body zone (508), in which the drift zone (504,514,540) has a first drift zone (540) of the second conductivity type (n-) and a second drift zone (504) of the second conductivity type (n) and a third drift zone (514) of the first conductivity type (p).