| 摘要 |
A magnetic memory includes a plurality of variable resistors arrayed as memory elements in a matrix, a plurality of bit lines each of which is arranged on each row of the matrix and connected to one terminal of each of variable resistors belonging to the same row, a read circuit which detects the resistance values of the variable resistors based on currents flowing through the bit lines, and load elements arranged on the bit lines independently of the memory elements.
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