发明名称 |
Plasma treatment of a titanium nitride film formed by chemical vapor deposition |
摘要 |
A method of forming thick titanium nitride films with low resistivity. Using a thermal chemical vapor deposition reaction between ammonia (NH3) and titanium tetrachloride (TiCl4), a titanium nitride film is formed at a temperature of less than about 600° C., and an NH3:TiCl4 ratio greater than about 5. The deposited TiN film is then treated in a hydrogen-containing plasma such as that generated from molecular hydrogen (H2). This results in a thick titanium nitride film with low resistivity and good step coverage. The deposition and plasma treatment steps may be repeated for additional cycles to form a thick, composite titanium nitride film of desired thickness, which is suitable for use in plug fill or capacitor structure applications.
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申请公布号 |
US2002155219(A1) |
申请公布日期 |
2002.10.24 |
申请号 |
US20000495555 |
申请日期 |
2000.02.01 |
申请人 |
WANG SHULIN;XI MING;LANDO ZVI;CHANG MEI |
发明人 |
WANG SHULIN;XI MING;LANDO ZVI;CHANG MEI |
分类号 |
C01B21/076;C23C16/00;C23C16/08;C23C16/34;H01L21/02;H01L21/205;H01L21/28;H01L21/285;H01L21/3205;H01L21/768;H01L21/822;H01L21/8242;H01L23/52;H01L27/04;H01L27/108;(IPC1-7):C23C16/00;B05D3/00 |
主分类号 |
C01B21/076 |
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