Contact chain total resistance measurement method for testing semiconductor chips, involves measuring voltage and current in probe pads to obtain total resistance, by selectively connecting n-type doped layers to substrate

摘要

The contact structures having a contact hole (38) which is electrically connected to n-type doped layer and a pair of ends coupled to probe pads, are connected in series. The n-type doped layers (32a,32b) are selectively connected to a substrate, and the voltage across the pair of probe pads and current through any one probe pad are measured to obtain total resistance on powering the contact chain. An Independent claim is included for contact structure debugging method.