| 摘要 |
A method of manufacturing an oxide ferroelectric thin film of Bi, Ti and O by an MOCVD method on a substrate having an electrode formed thereon, comprises the step of supplying material gases capable of forming the oxide ferroelectric thin film onto the substrate, wherein an oxygen gas flow rate relative to a total gas flow rate of the material gases is controlled to a value required for obtaining the oxide ferroelectric thin film having a predetermined orientation and/or coercive field, and a flow rate of at least one of the material gases containing constituent elements other than oxygen constituting the oxide ferroelectric thin film is controlled so that a compositional ratio of the constituent elements other than oxygen constituting the oxide ferroelectric thin film is a value required for obtaining the oxide ferroelectric thin film having a predetermined residual polarization and/or relative dielectric constant.
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