METHOD FOR FABRICATING AN INTEGRATED CIRCUIT, IN PARTICULAR AN ANTIFUSE

摘要

The present invention provides a method for fabricating an integrated circuit, comprising the following steps: preparing a circuit substrate (1); providing a metallization region (10a) comprising a first metal in the circuit substrate (1); providing a first insulation layer (25) above the metallization region (10a); forming an opening (13) in the insulating layer (25) in order to uncover at least part of the surface of the metallization region (10a); depositing a functional layer (15') above the resulting structure; depositing a second insulating layer (35) above the resulting structure, in such a manner that the opening (13) is filled; polishing-back of the second insulating layer (35) and of the functional layer (15') in order to uncover the surface of the first insulating layer (25); forming a contact (11a') in the second insulating layer (35) inside the opening (13) in order to make contact with the functional layer (15'); and providing an interconnect (40a) for electrical connection of the contact (11a').