发明名称 |
Optical endpoint detection for buff module on CMP tool |
摘要 |
The invention includes a polishing station and a buffing station for chemically mechanically polishing a wafer. The buffing station preferably includes a pair of rotating opposing buffing pads that receive a portion of the wafer. In the buffing station, a measurement instrument may be positioned adjacent an exposed portion of the wafer for detecting an endpoint of the buffing process. A first slurry may be used in the polishing station and a second slurry may be used in the buffing station. For planarizing a wafer with a metal layer over a barrier layer, the metal layer may be removed at the polishing station while the barrier layer is removed at the buffing station. For planarizing a dielectric layer, the top portion of the dielectric layer may be removed at the polishing station with an additional amount removed at the buffing station thereby leaving a dielectric layer with a desired thickness.
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申请公布号 |
US2002155795(A1) |
申请公布日期 |
2002.10.24 |
申请号 |
US20010840901 |
申请日期 |
2001.04.24 |
申请人 |
FERRA MARK;EPSHTEYN YAKOV;BELLAMAK WILLIAM J. |
发明人 |
FERRA MARK;EPSHTEYN YAKOV;BELLAMAK WILLIAM J. |
分类号 |
B24B29/00;B24B37/04;B24B49/12;(IPC1-7):B24B1/00 |
主分类号 |
B24B29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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