发明名称 |
High-frequency semiconductor device |
摘要 |
A semiconductor device includes a silicon substrate with a resistivity being raised by diffusing Au etc. therein, and includes both active elements and passive elements. The active elements are all placed within a semiconductor chip, and the semiconductor chip is flip-chip mounted over the silicon substrate. Such a case where the silicon substrate is heated due to a heating process for forming the active elements can be avoided, and therefore, diffusion of Au etc. from the silicon substrate into the semiconductor device can be avoided.
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申请公布号 |
US2002153616(A1) |
申请公布日期 |
2002.10.24 |
申请号 |
US20020122514 |
申请日期 |
2002.04.15 |
申请人 |
KUNIHISA TAKETO;NOBUSADA TOSHIHIDE;YAHATA KAZUHIRO |
发明人 |
KUNIHISA TAKETO;NOBUSADA TOSHIHIDE;YAHATA KAZUHIRO |
分类号 |
H01L23/52;H01L21/3205;H01L21/822;H01L23/12;H01L23/14;H01L23/48;H01L23/66;H01L25/00;H01L27/04;H01L29/40;H01L49/02;(IPC1-7):H01L23/48 |
主分类号 |
H01L23/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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